Samsung is reportedly gearing up to redesign its 6th-generation 1c DRAM in a bid to enhance yield rates and outpace the looming HBM4 process competition.
The company’s 1c DRAM chip is set to play a pivotal role in the development of its HBM4 process, a significant drive for Samsung’s memory business success. According to ZDNet Korea, since mid-2024, Samsung has been scrutinizing the designs for its state-of-the-art DRAM processes. The aim is clear: to revamp its top-tier 1c DRAM and ensure the seamless adoption of their forthcoming HBM technologies within the industry. This move might help overcome the hurdles faced during the integration of HBM3 derivatives by major players like NVIDIA.
The report indicates that Samsung’s advanced DRAM process initially missed hitting the desired yield rates, which hovered around 60%-70%. This shortfall hindered Samsung from advancing to the mass production phase. The core of the issue seems to lie in the 1c DRAM chip’s size. Samsung’s initial focus was on shrinking the chip to boost production volumes, but this approach undermined process stability and resulted in lower yields.
ZDNet Korea reveals that Samsung Electronics opted to tweak the 1c DRAM design by enlarging the chip size, honing in on improving yields, with a target set for mid-year. The company appears determined to stabilize mass production of next-gen memory, despite potential cost hikes.
This 1c DRAM process is essential for the success of Samsung’s HBM4 products. With competitors like SK Hynix and Micron already having their designs fine-tuned, the clock is ticking for Samsung. Given the company’s rather shaky standing following the HBM3 debacle, it is crucial that Samsung meets industry benchmarks with its 1c DRAM process this time around.
As of now, the fate of Samsung’s 6th-generation DRAM process remains uncertain. However, developments in the coming months may very well align Samsung’s HBM4 process for mass production, anticipated by year-end.